SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
氮化镓缓冲层生长过程分析
刘祥林; 汪连山; 陆大成; 王晓晖; 汪度; 林兰英
1999
Source Publication半导体学报
Volume20Issue:7Pages:529
Abstract研究了用金属有机物化学气相外延(MOVPE)在蓝宝石上生长氮化镓(GaN)缓冲层的生长速率随生长温度(500~600℃)的变化关系。用原位激光反射厚度测量方法,发现生长温度、三甲基镓和氨气的摩尔流量、以及源进入双层反应室的模式都对生长速率有影响。提出了生长过程的微观模型,解释了MOVPE生长GaN缓冲层过程中观察到的现象。
metadata_83中科院半导体所
Subject Area半导体材料
Funding Organization国家863计划
Indexed ByCSCD
Language中文
CSCD IDCSCD:532528
Date Available2010-11-23
Citation statistics
Cited Times:4[CSCD]   [CSCD Record]
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/18915
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
刘祥林,汪连山,陆大成,等. 氮化镓缓冲层生长过程分析[J]. 半导体学报,1999,20(7):529.
APA 刘祥林,汪连山,陆大成,王晓晖,汪度,&林兰英.(1999).氮化镓缓冲层生长过程分析.半导体学报,20(7),529.
MLA 刘祥林,et al."氮化镓缓冲层生长过程分析".半导体学报 20.7(1999):529.
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