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掺硅氮化镓材料的MOVPE生长及其性质研究
刘祥林; 汪连山; 陆大成; 汪度; 王晓晖; 林兰英
1999
Source Publication半导体学报
Volume20Issue:7Pages:534
Abstract研究了用金属有机物气相外延(MOVPE)方法在蓝宝石衬底上生长掺硅氮化镓的生长方法。发现了在硅烷掺杂剂流量较高的情况下,氮化镓的电子浓度趋于饱和现象。研究了掺硅氮化镓的电学、光学、结晶学以及表面形貌等物理性质。
metadata_83中科院半导体所
Subject Area半导体材料
Funding Organization国家863计划
Indexed ByCSCD
Language中文
CSCD IDCSCD:532529
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/18913
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
刘祥林,汪连山,陆大成,等. 掺硅氮化镓材料的MOVPE生长及其性质研究[J]. 半导体学报,1999,20(7):534.
APA 刘祥林,汪连山,陆大成,汪度,王晓晖,&林兰英.(1999).掺硅氮化镓材料的MOVPE生长及其性质研究.半导体学报,20(7),534.
MLA 刘祥林,et al."掺硅氮化镓材料的MOVPE生长及其性质研究".半导体学报 20.7(1999):534.
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