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ECR Plasma CVD法淀积808nm大功率半导体激光器光学膜工艺研究
谭满清; 茅冬生
1999
Source Publication半导体学报
Volume20Issue:7Pages:589
Abstract介绍了电子回旋共振等离子体化学气相沉积(简称ECR Plasma CVD)法淀积808nm大功率半导体激光器两端面光学膜的工艺,给出工艺条件,探索了膜系监控的方法和优越性,讨论了这种淀积方法的优点和淀积的光学膜的优良特性。
metadata_83中科院半导体所
Subject Area光电子学
Indexed ByCSCD
Language中文
CSCD IDCSCD:532540
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/18909
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
谭满清,茅冬生. ECR Plasma CVD法淀积808nm大功率半导体激光器光学膜工艺研究[J]. 半导体学报,1999,20(7):589.
APA 谭满清,&茅冬生.(1999).ECR Plasma CVD法淀积808nm大功率半导体激光器光学膜工艺研究.半导体学报,20(7),589.
MLA 谭满清,et al."ECR Plasma CVD法淀积808nm大功率半导体激光器光学膜工艺研究".半导体学报 20.7(1999):589.
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