SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
Si(100)面上3C-SiC的生长
王引书; 李晋闽; 张方方; 林兰英
1999
Source Publication半导体学报
Volume20Issue:7Pages:630
metadata_83中科院半导体所
Subject Area半导体材料
Indexed ByCSCD
Language中文
CSCD IDCSCD:532547
Date Available2010-11-23
Citation statistics
Cited Times:6[CSCD]   [CSCD Record]
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/18905
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
王引书,李晋闽,张方方,等. Si(100)面上3C-SiC的生长[J]. 半导体学报,1999,20(7):630.
APA 王引书,李晋闽,张方方,&林兰英.(1999).Si(100)面上3C-SiC的生长.半导体学报,20(7),630.
MLA 王引书,et al."Si(100)面上3C-SiC的生长".半导体学报 20.7(1999):630.
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