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氮化镓缓冲层的物理性质 | |
刘祥林; 汪连山; 陆大成; 王晓晖; 汪度; 林兰英 | |
1999 | |
Source Publication | 半导体学报
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Volume | 633Issue:0 |
metadata_83 | 中科院半导体所 |
Subject Area | 半导体材料 |
Funding Organization | 国家863计划,国家自然科学基金 |
Indexed By | CSCD |
Language | 中文 |
CSCD ID | CSCD:532548 |
Date Available | 2010-11-23 |
Citation statistics | |
Document Type | 期刊论文 |
Identifier | http://ir.semi.ac.cn/handle/172111/18903 |
Collection | 中国科学院半导体研究所(2009年前) |
Recommended Citation GB/T 7714 | 刘祥林,汪连山,陆大成,等. 氮化镓缓冲层的物理性质[J]. 半导体学报,1999,633(0). |
APA | 刘祥林,汪连山,陆大成,王晓晖,汪度,&林兰英.(1999).氮化镓缓冲层的物理性质.半导体学报,633(0). |
MLA | 刘祥林,et al."氮化镓缓冲层的物理性质".半导体学报 633.0(1999). |
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5499.pdf(317KB) | 限制开放 | -- | Application Full Text |
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