SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
氮化镓缓冲层的物理性质
刘祥林; 汪连山; 陆大成; 王晓晖; 汪度; 林兰英
1999
Source Publication半导体学报
Volume633Issue:0
metadata_83中科院半导体所
Subject Area半导体材料
Funding Organization国家863计划,国家自然科学基金
Indexed ByCSCD
Language中文
CSCD IDCSCD:532548
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/18903
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
刘祥林,汪连山,陆大成,等. 氮化镓缓冲层的物理性质[J]. 半导体学报,1999,633(0).
APA 刘祥林,汪连山,陆大成,王晓晖,汪度,&林兰英.(1999).氮化镓缓冲层的物理性质.半导体学报,633(0).
MLA 刘祥林,et al."氮化镓缓冲层的物理性质".半导体学报 633.0(1999).
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