SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
大电流(直流)冲击试验对-族氮化物异质结深电子态的影响
卢励吾; 张砚华; Ge Weikun; Ho W Y; Surya Charles; Tongc K Y
1999
Source Publication半导体学报
Volume667Issue:0
metadata_83中科院半导体所;香港科技大学物理系;香港理工大学电子工程系
Subject Area半导体材料
Funding Organization香港科技大学研究基金,国家自然科学基金,半导体材料科学开放实验室基金
Indexed ByCSCD
Language中文
CSCD IDCSCD:532554
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/18899
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
卢励吾,张砚华,Ge Weikun,等. 大电流(直流)冲击试验对-族氮化物异质结深电子态的影响[J]. 半导体学报,1999,667(0).
APA 卢励吾,张砚华,Ge Weikun,Ho W Y,Surya Charles,&Tongc K Y.(1999).大电流(直流)冲击试验对-族氮化物异质结深电子态的影响.半导体学报,667(0).
MLA 卢励吾,et al."大电流(直流)冲击试验对-族氮化物异质结深电子态的影响".半导体学报 667.0(1999).
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