SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
辐射加固的JFET/SOS:工艺及γ辐射效应
聂纪平; 刘忠立; 和致经; 于芳; 李国花; 张永刚
1999
Source Publication半导体学报
Volume676Issue:0
metadata_83中科院半导体所
Subject Area微电子学
Indexed ByCSCD
Language中文
CSCD IDCSCD:532556
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/18897
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
聂纪平,刘忠立,和致经,等. 辐射加固的JFET/SOS:工艺及γ辐射效应[J]. 半导体学报,1999,676(0).
APA 聂纪平,刘忠立,和致经,于芳,李国花,&张永刚.(1999).辐射加固的JFET/SOS:工艺及γ辐射效应.半导体学报,676(0).
MLA 聂纪平,et al."辐射加固的JFET/SOS:工艺及γ辐射效应".半导体学报 676.0(1999).
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