SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
Monolithic Integration of DFB Laser Diode and Electroabsorption Modulator by Selective Area Growth Technology
Xu GY(许国阳); Wang W(王圩); Yan XJ(颜学进); Zhu HL(朱洪亮); Zhou F(周帆); Zhang JY(张静媛); Wang XJ(汪孝杰)
1999
Source Publication半导体学报
Volume706Issue:0
metadata_83中科院半导体所
Subject Area半导体器件
Funding Organization国家863计划
Indexed ByCSCD
Language英语
CSCD IDCSCD:532562
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/18893
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
Xu GY,Wang W,Yan XJ,et al. Monolithic Integration of DFB Laser Diode and Electroabsorption Modulator by Selective Area Growth Technology[J]. 半导体学报,1999,706(0).
APA 许国阳.,王圩.,颜学进.,朱洪亮.,周帆.,...&汪孝杰.(1999).Monolithic Integration of DFB Laser Diode and Electroabsorption Modulator by Selective Area Growth Technology.半导体学报,706(0).
MLA 许国阳,et al."Monolithic Integration of DFB Laser Diode and Electroabsorption Modulator by Selective Area Growth Technology".半导体学报 706.0(1999).
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