SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
Ge_(0.4)Si_(0.6)/Si多量子阱与Ge/Si短周期超晶格样品中的深中心
王海龙; 司俊杰; 封松林
1999
Source Publication半导体学报
Volume20Issue:9Pages:737
metadata_83中科院半导体所
Subject Area半导体物理
Indexed ByCSCD
Language中文
CSCD IDCSCD:532568
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/18885
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
王海龙,司俊杰,封松林. Ge_(0.4)Si_(0.6)/Si多量子阱与Ge/Si短周期超晶格样品中的深中心[J]. 半导体学报,1999,20(9):737.
APA 王海龙,司俊杰,&封松林.(1999).Ge_(0.4)Si_(0.6)/Si多量子阱与Ge/Si短周期超晶格样品中的深中心.半导体学报,20(9),737.
MLA 王海龙,et al."Ge_(0.4)Si_(0.6)/Si多量子阱与Ge/Si短周期超晶格样品中的深中心".半导体学报 20.9(1999):737.
Files in This Item:
File Name/Size DocType Version Access License
5490.pdf(131KB) 限制开放--Application Full Text
Related Services
Recommend this item
Bookmark
Usage statistics
Export to Endnote
Google Scholar
Similar articles in Google Scholar
[王海龙]'s Articles
[司俊杰]'s Articles
[封松林]'s Articles
Baidu academic
Similar articles in Baidu academic
[王海龙]'s Articles
[司俊杰]'s Articles
[封松林]'s Articles
Bing Scholar
Similar articles in Bing Scholar
[王海龙]'s Articles
[司俊杰]'s Articles
[封松林]'s Articles
Terms of Use
No data!
Social Bookmark/Share
All comments (0)
No comment.
 

Items in the repository are protected by copyright, with all rights reserved, unless otherwise indicated.