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ECR Plasma CVD法淀积介质膜技术在半导体光电器件中的应用
茅冬生; 谭满清
1999
Source Publication半导体学报
Volume20Issue:9Pages:837
Abstract电子回旋共振等离子体化学气相淀积(ECR Plasma CVD)法淀积介质膜技术是制备性能优良的光电子器件光学膜和电介质膜的重要手段之一。该文报道了ECR Plamsa CVD法淀积介质膜的工艺以及介质膜的特性等。
metadata_83中科院半导体所
Subject Area半导体化学
Indexed ByCSCD
Language中文
CSCD IDCSCD:532586
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/18881
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
茅冬生,谭满清. ECR Plasma CVD法淀积介质膜技术在半导体光电器件中的应用[J]. 半导体学报,1999,20(9):837.
APA 茅冬生,&谭满清.(1999).ECR Plasma CVD法淀积介质膜技术在半导体光电器件中的应用.半导体学报,20(9),837.
MLA 茅冬生,et al."ECR Plasma CVD法淀积介质膜技术在半导体光电器件中的应用".半导体学报 20.9(1999):837.
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