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MBE生长的InAs薄膜Hall器件
周宏伟; 曾一平; 李歧旺; 王红梅; 潘量; 孔梅影
1999
Source Publication半导体学报
Volume20Issue:10Pages:873
Abstract利用GaAs衬底上的InAa薄膜制备的Hall器件,具有灵敏度高(在相同的电子浓度、室温附近灵敏度是GaAs Hall器件的1.5倍),不等位电压温漂小等优点。可用于电流传感器、无刷电机等磁敏传感器中,具有广阔的应用前景。
metadata_83中科院半导体所
Subject Area半导体材料
Indexed ByCSCD
Language中文
CSCD IDCSCD:532593
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/18877
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
周宏伟,曾一平,李歧旺,等. MBE生长的InAs薄膜Hall器件[J]. 半导体学报,1999,20(10):873.
APA 周宏伟,曾一平,李歧旺,王红梅,潘量,&孔梅影.(1999).MBE生长的InAs薄膜Hall器件.半导体学报,20(10),873.
MLA 周宏伟,et al."MBE生长的InAs薄膜Hall器件".半导体学报 20.10(1999):873.
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