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Strain Analysis of Cubic AlGaN/GaNGrownon GaAs(100) Substrate by MOVPE | |
徐大鹏; 杨辉; 赵德刚![]() ![]() | |
1999 | |
Source Publication | 半导体学报
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Volume | 20Issue:10Pages:921 |
metadata_83 | 中科院半导体所 |
Subject Area | 光电子学 |
Indexed By | CSCD |
Language | 英语 |
CSCD ID | CSCD:532602 |
Date Available | 2010-11-23 |
Citation statistics | |
Document Type | 期刊论文 |
Identifier | http://ir.semi.ac.cn/handle/172111/18875 |
Collection | 中国科学院半导体研究所(2009年前) |
Recommended Citation GB/T 7714 | 徐大鹏,杨辉,赵德刚,等. Strain Analysis of Cubic AlGaN/GaNGrownon GaAs(100) Substrate by MOVPE[J]. 半导体学报,1999,20(10):921. |
APA | 徐大鹏.,杨辉.,赵德刚.,郑联喜.,李建斌.,...&吴荣汉.(1999).Strain Analysis of Cubic AlGaN/GaNGrownon GaAs(100) Substrate by MOVPE.半导体学报,20(10),921. |
MLA | 徐大鹏,et al."Strain Analysis of Cubic AlGaN/GaNGrownon GaAs(100) Substrate by MOVPE".半导体学报 20.10(1999):921. |
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