SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
Strain Analysis of Cubic AlGaN/GaNGrownon GaAs(100) Substrate by MOVPE
徐大鹏; 杨辉; 赵德刚; 郑联喜; 李建斌; 王玉田; 李顺峰; 吴荣汉
1999
Source Publication半导体学报
Volume20Issue:10Pages:921
metadata_83中科院半导体所
Subject Area光电子学
Indexed ByCSCD
Language英语
CSCD IDCSCD:532602
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/18875
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
徐大鹏,杨辉,赵德刚,等. Strain Analysis of Cubic AlGaN/GaNGrownon GaAs(100) Substrate by MOVPE[J]. 半导体学报,1999,20(10):921.
APA 徐大鹏.,杨辉.,赵德刚.,郑联喜.,李建斌.,...&吴荣汉.(1999).Strain Analysis of Cubic AlGaN/GaNGrownon GaAs(100) Substrate by MOVPE.半导体学报,20(10),921.
MLA 徐大鹏,et al."Strain Analysis of Cubic AlGaN/GaNGrownon GaAs(100) Substrate by MOVPE".半导体学报 20.10(1999):921.
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