Strain Analysis of Cubic AlGaN/GaNGrownon GaAs（100） Substrate by MOVPE

SEMI OpenIR > 中国科学院半导体研究所（2009年前）

	Strain Analysis of Cubic AlGaN/GaNGrownon GaAs（100） Substrate by MOVPE
	徐大鹏; 杨辉; 赵德刚; 郑联喜; 李建斌; 王玉田; 李顺峰; 吴荣汉
	1999
Source Publication	半导体学报
Volume	20 Issue:10 Pages:921
metadata_83	中科院半导体所
Subject Area	光电子学
Indexed By	CSCD
Language	英语
CSCD ID	CSCD:532602
Date Available	2010-11-23
Citation statistics
Document Type	期刊论文
Identifier	http://ir.semi.ac.cn/handle/172111/18875
Collection	中国科学院半导体研究所（2009年前）
Recommended Citation GB/T 7714	徐大鹏,杨辉,赵德刚,等. Strain Analysis of Cubic AlGaN/GaNGrownon GaAs（100） Substrate by MOVPE[J]. 半导体学报,1999,20(10):921.
APA	徐大鹏.,杨辉.,赵德刚.,郑联喜.,李建斌.,...&吴荣汉.(1999).Strain Analysis of Cubic AlGaN/GaNGrownon GaAs（100） Substrate by MOVPE.半导体学报,20(10),921.
MLA	徐大鹏,et al."Strain Analysis of Cubic AlGaN/GaNGrownon GaAs（100） Substrate by MOVPE".半导体学报 20.10(1999):921.

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