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硅表面清洗对7nm热SiO_2栅介质可靠性的影响
高文钰; 刘忠立; 和致经; 张永刚; 梁秀琴; 梁桂荣
1999
Source Publication半导体学报
Volume20Issue:10Pages:930
Abstract实验研究了硅表面清洗方式对7nm热氧化SiO_2栅介质可靠性的影响。结果表明,稀HF酸漂洗后RCA清洗时降低SC1(NH_4OH)/H_2O_2/H_2O)温度对提高栅介质可靠性有利,但仍不如用SC2(HCl/H_2O_2/H_2O)或H_2SO_4/H_2O_2清洗效果好。稀HF酸漂洗后用H_2SO_4/H_2O_2清洗得到的栅介质不仅表现出优良的击穿电场分布特性和击穿电场分布特性,抗热电子损伤能力也比较强。
metadata_83中科院半导体所
Subject Area微电子学
Funding Organization国家自然科学基金
Indexed ByCSCD
Language中文
CSCD IDCSCD:532604
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/18871
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
高文钰,刘忠立,和致经,等. 硅表面清洗对7nm热SiO_2栅介质可靠性的影响[J]. 半导体学报,1999,20(10):930.
APA 高文钰,刘忠立,和致经,张永刚,梁秀琴,&梁桂荣.(1999).硅表面清洗对7nm热SiO_2栅介质可靠性的影响.半导体学报,20(10),930.
MLA 高文钰,et al."硅表面清洗对7nm热SiO_2栅介质可靠性的影响".半导体学报 20.10(1999):930.
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