SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
InP衬底表面的H_2/N_2等离子体清洁技术
谭满清; 茅冬生
1999
Source Publication半导体学报
Volume20Issue:10Pages:941
Abstract该文介绍了用电子回旋共振(ECR)H_2/N_2等离子体去除InP衬底表面的氧、碳原子的方法,并保持了InP衬底表面原有的有序结构,给出了这种处理方法的工艺条件,对这种方法的优越性进行了系统的分析和讨论,得出了一些有价值的结论。
metadata_83中科院半导体所
Subject Area半导体材料
Indexed ByCSCD
Language中文
CSCD IDCSCD:532606
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/18869
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
谭满清,茅冬生. InP衬底表面的H_2/N_2等离子体清洁技术[J]. 半导体学报,1999,20(10):941.
APA 谭满清,&茅冬生.(1999).InP衬底表面的H_2/N_2等离子体清洁技术.半导体学报,20(10),941.
MLA 谭满清,et al."InP衬底表面的H_2/N_2等离子体清洁技术".半导体学报 20.10(1999):941.
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