SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
界面态对AlGaAs/GaAs HEMT直流输出特性的影响
张兴宏; 程知群; 夏冠群; 徐元森; 杨玉芬; 王占国
1999
Source Publication半导体学报
Volume20Issue:11Pages:989
Abstract利用高电子迁移率晶体管(HEMT)的直流输出分析模型,首次定量地分析了界面态对AlGaAs/GaAs HEMT直流输出特性的影响。考虑界面态的作用,详细分析了不同界面态密度对HEMT的I-V特性和器件跨导的影响。研究结果表明随着界面态密度的增加,栅极电压对电流的控制能力减小,从而使器件的跨导减小。
metadata_83中科院上海冶金所;中科院半导体所
Subject Area半导体材料
Indexed ByCSCD
Language中文
CSCD IDCSCD:532614
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/18863
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
张兴宏,程知群,夏冠群,等. 界面态对AlGaAs/GaAs HEMT直流输出特性的影响[J]. 半导体学报,1999,20(11):989.
APA 张兴宏,程知群,夏冠群,徐元森,杨玉芬,&王占国.(1999).界面态对AlGaAs/GaAs HEMT直流输出特性的影响.半导体学报,20(11),989.
MLA 张兴宏,et al."界面态对AlGaAs/GaAs HEMT直流输出特性的影响".半导体学报 20.11(1999):989.
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