SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
图形衬底上硅区双离子束选择淀积Co研究
吴正龙; 姚振钰; 刘志凯; 张建辉; 秦复光; 林兰英
1999
Source Publication半导体学报
Volume20Issue:11Pages:1010
Abstract报道了利用质量分离低能双离子束淀积法在硅-氧化硅图形衬底上采用不同的工艺条件淀积钴(Co)离子,并生长硅化钴薄膜。扫描俄歇微探针(SAM)和X光电子能谱(XPS)测量结果表明,只在纯硅区探测到了硅化钴;而氧化硅区始终未见有钴的迹象。很好地实现了在图形衬底上钴离子的选择淀积和硅化钴薄膜的选择生长。
metadata_83北京师范大学分析测试中心;中科院半导体所
Subject Area半导体材料
Funding Organization国家八五计划
Indexed ByCSCD
Language中文
CSCD IDCSCD:532618
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/18859
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
吴正龙,姚振钰,刘志凯,等. 图形衬底上硅区双离子束选择淀积Co研究[J]. 半导体学报,1999,20(11):1010.
APA 吴正龙,姚振钰,刘志凯,张建辉,秦复光,&林兰英.(1999).图形衬底上硅区双离子束选择淀积Co研究.半导体学报,20(11),1010.
MLA 吴正龙,et al."图形衬底上硅区双离子束选择淀积Co研究".半导体学报 20.11(1999):1010.
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