SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
Quasi-Thermodynamic Model for MOVPE of AlGaN
Lu DC(陆大成); Duan SK(段树坤)
1999
Source Publication半导体学报
Volume20Issue:11Pages:1026
metadata_83中科院半导体所
Subject Area半导体材料
Funding Organization国家863计划,国家自然科学基金
Indexed ByCSCD
Language英语
CSCD IDCSCD:532621
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/18857
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
Lu DC,Duan SK. Quasi-Thermodynamic Model for MOVPE of AlGaN[J]. 半导体学报,1999,20(11):1026.
APA 陆大成,&段树坤.(1999).Quasi-Thermodynamic Model for MOVPE of AlGaN.半导体学报,20(11),1026.
MLA 陆大成,et al."Quasi-Thermodynamic Model for MOVPE of AlGaN".半导体学报 20.11(1999):1026.
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