Quasi-Thermodynamic Model for MOVPE of AlGaN

SEMI OpenIR > 中国科学院半导体研究所（2009年前）

	Quasi-Thermodynamic Model for MOVPE of AlGaN
	Lu DC(陆大成); Duan SK(段树坤)
	1999
Source Publication	半导体学报
Volume	20 Issue:11 Pages:1026
metadata_83	中科院半导体所
Subject Area	半导体材料
Funding Organization	国家863计划,国家自然科学基金
Indexed By	CSCD
Language	英语
CSCD ID	CSCD:532621
Date Available	2010-11-23
Citation statistics	Cited Times:3[CSCD] [CSCD Record]
Document Type	期刊论文
Identifier	http://ir.semi.ac.cn/handle/172111/18857
Collection	中国科学院半导体研究所（2009年前）
Recommended Citation GB/T 7714	Lu DC,Duan SK. Quasi-Thermodynamic Model for MOVPE of AlGaN[J]. 半导体学报,1999,20(11):1026.
APA	陆大成,&段树坤.(1999).Quasi-Thermodynamic Model for MOVPE of AlGaN.半导体学报,20(11),1026.
MLA	陆大成,et al."Quasi-Thermodynamic Model for MOVPE of AlGaN".半导体学报 20.11(1999):1026.

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