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Quasi-Thermodynamic Model for MOVPE of AlGaN | |
Lu DC(陆大成); Duan SK(段树坤) | |
1999 | |
Source Publication | 半导体学报
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Volume | 20Issue:11Pages:1026 |
metadata_83 | 中科院半导体所 |
Subject Area | 半导体材料 |
Funding Organization | 国家863计划,国家自然科学基金 |
Indexed By | CSCD |
Language | 英语 |
CSCD ID | CSCD:532621 |
Date Available | 2010-11-23 |
Citation statistics | |
Document Type | 期刊论文 |
Identifier | http://ir.semi.ac.cn/handle/172111/18857 |
Collection | 中国科学院半导体研究所(2009年前) |
Recommended Citation GB/T 7714 | Lu DC,Duan SK. Quasi-Thermodynamic Model for MOVPE of AlGaN[J]. 半导体学报,1999,20(11):1026. |
APA | 陆大成,&段树坤.(1999).Quasi-Thermodynamic Model for MOVPE of AlGaN.半导体学报,20(11),1026. |
MLA | 陆大成,et al."Quasi-Thermodynamic Model for MOVPE of AlGaN".半导体学报 20.11(1999):1026. |
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File Name/Size | DocType | Version | Access | License | ||
5476.pdf(258KB) | 限制开放 | -- | Application Full Text |
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