Knowledge Management System Of Institute of Semiconductors,CAS
GSMBE原位生长SiGeHBT材料 | |
黄大定; 刘金平; 李建平; 林燕霞; 刘学锋; 李灵霄; 孙殿照; 孔梅影; 林兰英 | |
1999 | |
Source Publication | 半导体学报
![]() |
Volume | 20Issue:12Pages:1049 |
metadata_83 | 中科院半导体所 |
Subject Area | 半导体材料 |
Funding Organization | 国家九五计划 |
Indexed By | CSCD |
Language | 中文 |
CSCD ID | CSCD:532625 |
Date Available | 2010-11-23 |
Citation statistics | |
Document Type | 期刊论文 |
Identifier | http://ir.semi.ac.cn/handle/172111/18853 |
Collection | 中国科学院半导体研究所(2009年前) |
Recommended Citation GB/T 7714 | 黄大定,刘金平,李建平,等. GSMBE原位生长SiGeHBT材料[J]. 半导体学报,1999,20(12):1049. |
APA | 黄大定.,刘金平.,李建平.,林燕霞.,刘学锋.,...&林兰英.(1999).GSMBE原位生长SiGeHBT材料.半导体学报,20(12),1049. |
MLA | 黄大定,et al."GSMBE原位生长SiGeHBT材料".半导体学报 20.12(1999):1049. |
Files in This Item: | ||||||
File Name/Size | DocType | Version | Access | License | ||
5474.pdf(304KB) | 限制开放 | -- | Application Full Text |
Items in the repository are protected by copyright, with all rights reserved, unless otherwise indicated.
Edit Comment