GSMBE原位生长SiGeHBT材料

SEMI OpenIR > 中国科学院半导体研究所（2009年前）

	GSMBE原位生长SiGeHBT材料
	黄大定; 刘金平; 李建平; 林燕霞; 刘学锋; 李灵霄; 孙殿照; 孔梅影; 林兰英
	1999
Source Publication	半导体学报
Volume	20 Issue:12 Pages:1049
metadata_83	中科院半导体所
Subject Area	半导体材料
Funding Organization	国家九五计划
Indexed By	CSCD
Language	中文
CSCD ID	CSCD:532625
Date Available	2010-11-23
Citation statistics	Cited Times:4[CSCD] [CSCD Record]
Document Type	期刊论文
Identifier	http://ir.semi.ac.cn/handle/172111/18853
Collection	中国科学院半导体研究所（2009年前）
Recommended Citation GB/T 7714	黄大定,刘金平,李建平,等. GSMBE原位生长SiGeHBT材料[J]. 半导体学报,1999,20(12):1049.
APA	黄大定.,刘金平.,李建平.,林燕霞.,刘学锋.,...&林兰英.(1999).GSMBE原位生长SiGeHBT材料.半导体学报,20(12),1049.
MLA	黄大定,et al."GSMBE原位生长SiGeHBT材料".半导体学报 20.12(1999):1049.

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