SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
生长温度对长波长InP/AlGaInAs/InP材料LP-MOCVD生长的影响
陈博; 王圩
1999
Source Publication半导体学报
Volume20Issue:12Pages:1054
Abstract研究不同生长温度下的InP/AlGaInAs/InP材料LP-MOCVD生长,用光致发光和X射线双晶衍射等测试手段分析了其材料特性,得到了室温脉冲激射1.3μm AlGaInAs有源区SCH-MQW结构材料,为器件制作研究打下了基础。
metadata_83中科院半导体所
Subject Area半导体材料
Funding Organization国家863计划,国家自然科学基金
Indexed ByCSCD
Language中文
CSCD IDCSCD:532626
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/18851
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
陈博,王圩. 生长温度对长波长InP/AlGaInAs/InP材料LP-MOCVD生长的影响[J]. 半导体学报,1999,20(12):1054.
APA 陈博,&王圩.(1999).生长温度对长波长InP/AlGaInAs/InP材料LP-MOCVD生长的影响.半导体学报,20(12),1054.
MLA 陈博,et al."生长温度对长波长InP/AlGaInAs/InP材料LP-MOCVD生长的影响".半导体学报 20.12(1999):1054.
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