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ECR Plasma CVD淀积介质膜折射率的神经网络模拟
李玉鉴; 谭满清; 茅冬生; 陆建祖
1999
Source Publication半导体学报
Volume20Issue:12Pages:1109
Abstract用人工神经网络方法对电子回旋共振等离子法化学气相沉积(ECR Plasma CVD)镀膜工艺建立了一个介质膜折射率n关于气流配比Q(N_2)/Q(SiH_4)和Q(Q_2)/Q(SiH_4)的数学模型。在给定气流配比Q(N_2)/Q(SiH_4)和Q(O_2)/Q(SiH_4)时模型预测的成膜折射率与实验值符合得很好。
metadata_83中科院半导体所
Subject Area光电子学
Funding Organization国家863计划
Indexed ByCSCD
Language中文
CSCD IDCSCD:532636
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/18849
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
李玉鉴,谭满清,茅冬生,等. ECR Plasma CVD淀积介质膜折射率的神经网络模拟[J]. 半导体学报,1999,20(12):1109.
APA 李玉鉴,谭满清,茅冬生,&陆建祖.(1999).ECR Plasma CVD淀积介质膜折射率的神经网络模拟.半导体学报,20(12),1109.
MLA 李玉鉴,et al."ECR Plasma CVD淀积介质膜折射率的神经网络模拟".半导体学报 20.12(1999):1109.
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