Ultralow Threshold Red Vertical-Cavity Surface-Emitting Lasers

SEMI OpenIR > 中国科学院半导体研究所（2009年前）

	Ultralow Threshold Red Vertical-Cavity Surface-Emitting Lasers
	Cheng P(程澎); Gao JH(高俊华); Kang XJ(康学军); Lin SM(林世鸣); Zhang GB(张光斌); Liu SA(刘世安); Hu GX(胡国新)
	2000
Source Publication	半导体学报
Volume	21 Issue:1 Pages:28
metadata_83	中科院半导体所
Subject Area	半导体材料
Funding Organization	国家自然科学基金
Indexed By	CSCD
Language	英语
CSCD ID	CSCD:532647
Date Available	2010-11-23
Citation statistics
Document Type	期刊论文
Identifier	http://ir.semi.ac.cn/handle/172111/18841
Collection	中国科学院半导体研究所（2009年前）
Recommended Citation GB/T 7714	Cheng P,Gao JH,Kang XJ,et al. Ultralow Threshold Red Vertical-Cavity Surface-Emitting Lasers[J]. 半导体学报,2000,21(1):28.
APA	程澎.,高俊华.,康学军.,林世鸣.,张光斌.,...&胡国新.(2000).Ultralow Threshold Red Vertical-Cavity Surface-Emitting Lasers.半导体学报,21(1),28.
MLA	程澎,et al."Ultralow Threshold Red Vertical-Cavity Surface-Emitting Lasers".半导体学报 21.1(2000):28.

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