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Ultralow Threshold Red Vertical-Cavity Surface-Emitting Lasers | |
Cheng P(程澎); Gao JH(高俊华); Kang XJ(康学军); Lin SM(林世鸣); Zhang GB(张光斌); Liu SA(刘世安); Hu GX(胡国新) | |
2000 | |
Source Publication | 半导体学报
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Volume | 21Issue:1Pages:28 |
metadata_83 | 中科院半导体所 |
Subject Area | 半导体材料 |
Funding Organization | 国家自然科学基金 |
Indexed By | CSCD |
Language | 英语 |
CSCD ID | CSCD:532647 |
Date Available | 2010-11-23 |
Citation statistics | |
Document Type | 期刊论文 |
Identifier | http://ir.semi.ac.cn/handle/172111/18841 |
Collection | 中国科学院半导体研究所(2009年前) |
Recommended Citation GB/T 7714 | Cheng P,Gao JH,Kang XJ,et al. Ultralow Threshold Red Vertical-Cavity Surface-Emitting Lasers[J]. 半导体学报,2000,21(1):28. |
APA | 程澎.,高俊华.,康学军.,林世鸣.,张光斌.,...&胡国新.(2000).Ultralow Threshold Red Vertical-Cavity Surface-Emitting Lasers.半导体学报,21(1),28. |
MLA | 程澎,et al."Ultralow Threshold Red Vertical-Cavity Surface-Emitting Lasers".半导体学报 21.1(2000):28. |
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5468.pdf(376KB) | 限制开放 | -- | Application Full Text |
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