SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
Ultralow Threshold Red Vertical-Cavity Surface-Emitting Lasers
Cheng P(程澎); Gao JH(高俊华); Kang XJ(康学军); Lin SM(林世鸣); Zhang GB(张光斌); Liu SA(刘世安); Hu GX(胡国新)
2000
Source Publication半导体学报
Volume21Issue:1Pages:28
metadata_83中科院半导体所
Subject Area半导体材料
Funding Organization国家自然科学基金
Indexed ByCSCD
Language英语
CSCD IDCSCD:532647
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/18841
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
Cheng P,Gao JH,Kang XJ,et al. Ultralow Threshold Red Vertical-Cavity Surface-Emitting Lasers[J]. 半导体学报,2000,21(1):28.
APA 程澎.,高俊华.,康学军.,林世鸣.,张光斌.,...&胡国新.(2000).Ultralow Threshold Red Vertical-Cavity Surface-Emitting Lasers.半导体学报,21(1),28.
MLA 程澎,et al."Ultralow Threshold Red Vertical-Cavity Surface-Emitting Lasers".半导体学报 21.1(2000):28.
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