SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
157W准连续AlGaAs/GaAs激光二极管线列阵
方高瞻; 肖建伟; 马骁宇; 谭满清; 刘宗顺; 刘素平; 胡长虹; 鲁琳; 李秀芳; 王梅
2000
Source Publication半导体学报
Volume21Issue:1Pages:102
Abstract通过优化设计量子阱结构和列阵结构,减小腔面光功率密度,避免器件腔面灾变损伤,得到1cm AlGaAs/GaAs激光二极管线列阵,在热沉温度21℃,脉冲宽度200μs,重复频率100Hz时,输出峰值功率达157W。
metadata_83中科院半导体所国家光电技术研究中心
Subject Area半导体器件
Indexed ByCSCD
Language中文
CSCD IDCSCD:532661
Date Available2010-11-23
Citation statistics
Cited Times:4[CSCD]   [CSCD Record]
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/18833
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
方高瞻,肖建伟,马骁宇,等. 157W准连续AlGaAs/GaAs激光二极管线列阵[J]. 半导体学报,2000,21(1):102.
APA 方高瞻.,肖建伟.,马骁宇.,谭满清.,刘宗顺.,...&王梅.(2000).157W准连续AlGaAs/GaAs激光二极管线列阵.半导体学报,21(1),102.
MLA 方高瞻,et al."157W准连续AlGaAs/GaAs激光二极管线列阵".半导体学报 21.1(2000):102.
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