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A Quasi-Therm odynam ic Model of MOVPE of InGaN
Lu DC(陆大成); Duan SK(段树坤)
2000
Source Publication半导体学报
Volume21Issue:2Pages:105
metadata_83中科院半导体所
Subject Area半导体材料
Funding Organization国家863计划,国家自然科学基金
Indexed ByCSCD
Language英语
CSCD IDCSCD:532662
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/18831
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
Lu DC,Duan SK. A Quasi-Therm odynam ic Model of MOVPE of InGaN[J]. 半导体学报,2000,21(2):105.
APA 陆大成,&段树坤.(2000).A Quasi-Therm odynam ic Model of MOVPE of InGaN.半导体学报,21(2),105.
MLA 陆大成,et al."A Quasi-Therm odynam ic Model of MOVPE of InGaN".半导体学报 21.2(2000):105.
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