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用气态源分子束外延生长法制备Si/SiGe/Sinpn异质结双极晶体管
刘学锋; 李晋闽; 孔梅影; 黄大定; 李建平; 林兰英
2000
Source Publication半导体学报
Volume21Issue:2Pages:142
metadata_83中科院半导体所
Subject Area半导体材料
Funding Organization国家九五计划
Indexed ByCSCD
Language中文
CSCD IDCSCD:532668
Date Available2010-11-23
Citation statistics
Cited Times:1[CSCD]   [CSCD Record]
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/18827
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
刘学锋,李晋闽,孔梅影,等. 用气态源分子束外延生长法制备Si/SiGe/Sinpn异质结双极晶体管[J]. 半导体学报,2000,21(2):142.
APA 刘学锋,李晋闽,孔梅影,黄大定,李建平,&林兰英.(2000).用气态源分子束外延生长法制备Si/SiGe/Sinpn异质结双极晶体管.半导体学报,21(2),142.
MLA 刘学锋,et al."用气态源分子束外延生长法制备Si/SiGe/Sinpn异质结双极晶体管".半导体学报 21.2(2000):142.
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