用气态源分子束外延生长法制备Si/SiGe/Sinpn异质结双极晶体管

SEMI OpenIR > 中国科学院半导体研究所（2009年前）

	用气态源分子束外延生长法制备Si/SiGe/Sinpn异质结双极晶体管
	刘学锋; 李晋闽; 孔梅影; 黄大定; 李建平; 林兰英
	2000
Source Publication	半导体学报
Volume	21 Issue:2 Pages:142
metadata_83	中科院半导体所
Subject Area	半导体材料
Funding Organization	国家九五计划
Indexed By	CSCD
Language	中文
CSCD ID	CSCD:532668
Date Available	2010-11-23
Citation statistics	Cited Times:1[CSCD] [CSCD Record]
Document Type	期刊论文
Identifier	http://ir.semi.ac.cn/handle/172111/18827
Collection	中国科学院半导体研究所（2009年前）
Recommended Citation GB/T 7714	刘学锋,李晋闽,孔梅影,等. 用气态源分子束外延生长法制备Si/SiGe/Sinpn异质结双极晶体管[J]. 半导体学报,2000,21(2):142.
APA	刘学锋,李晋闽,孔梅影,黄大定,李建平,&林兰英.(2000).用气态源分子束外延生长法制备Si/SiGe/Sinpn异质结双极晶体管.半导体学报,21(2),142.
MLA	刘学锋,et al."用气态源分子束外延生长法制备Si/SiGe/Sinpn异质结双极晶体管".半导体学报 21.2(2000):142.

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