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用气态源分子束外延生长法制备Si/SiGe/Sinpn异质结双极晶体管 | |
刘学锋; 李晋闽; 孔梅影; 黄大定; 李建平; 林兰英 | |
2000 | |
Source Publication | 半导体学报
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Volume | 21Issue:2Pages:142 |
metadata_83 | 中科院半导体所 |
Subject Area | 半导体材料 |
Funding Organization | 国家九五计划 |
Indexed By | CSCD |
Language | 中文 |
CSCD ID | CSCD:532668 |
Date Available | 2010-11-23 |
Citation statistics | |
Document Type | 期刊论文 |
Identifier | http://ir.semi.ac.cn/handle/172111/18827 |
Collection | 中国科学院半导体研究所(2009年前) |
Recommended Citation GB/T 7714 | 刘学锋,李晋闽,孔梅影,等. 用气态源分子束外延生长法制备Si/SiGe/Sinpn异质结双极晶体管[J]. 半导体学报,2000,21(2):142. |
APA | 刘学锋,李晋闽,孔梅影,黄大定,李建平,&林兰英.(2000).用气态源分子束外延生长法制备Si/SiGe/Sinpn异质结双极晶体管.半导体学报,21(2),142. |
MLA | 刘学锋,et al."用气态源分子束外延生长法制备Si/SiGe/Sinpn异质结双极晶体管".半导体学报 21.2(2000):142. |
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5461.pdf(282KB) | 限制开放 | -- | Application Full Text |
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