SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
半绝缘InP的优化生长条件以及掩埋的1.55μm激光器
许国阳; 颜学进; 朱洪亮; 段俐宏; 周帆; 田慧良; 白云霞; 王圩
2000
Source Publication半导体学报
Volume21Issue:2Pages:188
metadata_83中科院半导体所国家光电技术研究中心
Subject Area半导体器件
Funding Organization国家863计划
Indexed ByCSCD
Language中文
CSCD IDCSCD:532677
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/18825
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
许国阳,颜学进,朱洪亮,等. 半绝缘InP的优化生长条件以及掩埋的1.55μm激光器[J]. 半导体学报,2000,21(2):188.
APA 许国阳.,颜学进.,朱洪亮.,段俐宏.,周帆.,...&王圩.(2000).半绝缘InP的优化生长条件以及掩埋的1.55μm激光器.半导体学报,21(2),188.
MLA 许国阳,et al."半绝缘InP的优化生长条件以及掩埋的1.55μm激光器".半导体学报 21.2(2000):188.
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