SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
Characterization of Ga N_x As_(1 - x) Alloy Grownon Ga As by Molecular Beam Epitaxy
Li LH(李联合); Zhang W(张伟); Pan Z(潘钟); Lin YW(林耀望); Wu RH(吴荣汉)
2000
Source Publication半导体学报
Volume21Issue:3Pages:219
metadata_83中科院半导体所
Subject Area光电子学
Funding Organization集成光电子学国家重点实验室基金,国家863计划,国家自然科学基金,中科院项目
Indexed ByCSCD
Language英语
CSCD IDCSCD:532683
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/18821
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
Li LH,Zhang W,Pan Z,et al. Characterization of Ga N_x As_(1 - x) Alloy Grownon Ga As by Molecular Beam Epitaxy[J]. 半导体学报,2000,21(3):219.
APA 李联合,张伟,潘钟,林耀望,&吴荣汉.(2000).Characterization of Ga N_x As_(1 - x) Alloy Grownon Ga As by Molecular Beam Epitaxy.半导体学报,21(3),219.
MLA 李联合,et al."Characterization of Ga N_x As_(1 - x) Alloy Grownon Ga As by Molecular Beam Epitaxy".半导体学报 21.3(2000):219.
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