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CdF_2半导体膜中电子-表面声子强耦合对极化子性质的影响
额尔敦朝鲁; 肖景林; 李树深
2000
Source Publication半导体学报
Volume21Issue:3Pages:225
Abstract采用改进的Huybrechts线性组合算符和变分方法,研究了半导体膜内电子与表面光学声子强耦合、与体纵光学声子弱耦合对极化子性质影响,得到了极化子的有效质量和自陷能随膜厚的变化规律。对CdF_2半导体,计算了不同支声子与电子的相互作用对极化子有效质量和自陷能的贡献。
metadata_83内蒙古民族师范学院物理系;中科院半导体所
Subject Area半导体物理
Funding Organization中科院激发态物理开放实验室基金,国家自然科学基金
Indexed ByCSCD
Language中文
CSCD IDCSCD:532684
Date Available2010-11-23
Citation statistics
Cited Times:4[CSCD]   [CSCD Record]
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/18819
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
额尔敦朝鲁,肖景林,李树深. CdF_2半导体膜中电子-表面声子强耦合对极化子性质的影响[J]. 半导体学报,2000,21(3):225.
APA 额尔敦朝鲁,肖景林,&李树深.(2000).CdF_2半导体膜中电子-表面声子强耦合对极化子性质的影响.半导体学报,21(3),225.
MLA 额尔敦朝鲁,et al."CdF_2半导体膜中电子-表面声子强耦合对极化子性质的影响".半导体学报 21.3(2000):225.
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