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掺铒硅光致发光激子传递能量机制
雷红兵; 杨沁清; 欧海燕; 余金中; 王启明
2000
Source Publication半导体学报
Volume21Issue:3Pages:232
Abstract铒离子在硅中呈现弱施主特性,O、Er双掺杂提高施主浓度两个数量级。氧杂质与铒离子形成复合体,其施主能级可能是铒离子发光能量转换的重要通道。提出了掺铒硅光致发光激子传递能量模型,建立了发光动力学速率方程,并进行了详细推导。发光效率与光激活铒离子浓度、激发态寿命及自发辐射寿命等因素有关。指出铒离子-束缚激子复合体的热离体和激发态铒离子能量反向传递是引起铒离子发光温度猝灭的主要原因。拟合PL测量实验结果表明
metadata_83中科院半导体所
Subject Area光电子学
Funding Organization国家自然科学基金
Indexed ByCSCD
Language中文
CSCD IDCSCD:532685
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/18817
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
雷红兵,杨沁清,欧海燕,等. 掺铒硅光致发光激子传递能量机制[J]. 半导体学报,2000,21(3):232.
APA 雷红兵,杨沁清,欧海燕,余金中,&王启明.(2000).掺铒硅光致发光激子传递能量机制.半导体学报,21(3),232.
MLA 雷红兵,et al."掺铒硅光致发光激子传递能量机制".半导体学报 21.3(2000):232.
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