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用氧化多孔硅方法制备厚的SiO_2膜及其微观分析
欧海燕; 杨沁清; 雷红兵; 王红杰; 余金中; 王启明; 胡雄伟
2000
Source Publication半导体学报
Volume21Issue:3Pages:260
Abstract用氧化多孔硅的方法来制备厚的SiO_2成本低,省时。氧化硅膜的厚度,表面粗糙和组分这三个参数,对波导器件的性能有重要影响,扫描电子显微镜(SEM)、原子力显微镜(AFM)和俄歇分析得到
metadata_83中科院半导体所;国家光电子工艺中心
Subject Area光电子学
Funding Organization国家自然科学基金
Indexed ByCSCD
Language中文
CSCD IDCSCD:532690
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/18813
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
欧海燕,杨沁清,雷红兵,等. 用氧化多孔硅方法制备厚的SiO_2膜及其微观分析[J]. 半导体学报,2000,21(3):260.
APA 欧海燕.,杨沁清.,雷红兵.,王红杰.,余金中.,...&胡雄伟.(2000).用氧化多孔硅方法制备厚的SiO_2膜及其微观分析.半导体学报,21(3),260.
MLA 欧海燕,et al."用氧化多孔硅方法制备厚的SiO_2膜及其微观分析".半导体学报 21.3(2000):260.
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