SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
掺杂nc-Si∶H膜的电导特性
彭英才; 刘明; 何宇亮; 李月霞
2000
Source Publication半导体学报
Volume21Issue:3Pages:308
metadata_83河北大学电子信息工程学院;中科院微电子中心;北京航空航天大学材料物理与化学研究中心;中科院半导体所
Subject Area半导体材料
Indexed ByCSCD
Language中文
CSCD IDCSCD:532699
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/18811
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
彭英才,刘明,何宇亮,等. 掺杂nc-Si∶H膜的电导特性[J]. 半导体学报,2000,21(3):308.
APA 彭英才,刘明,何宇亮,&李月霞.(2000).掺杂nc-Si∶H膜的电导特性.半导体学报,21(3),308.
MLA 彭英才,et al."掺杂nc-Si∶H膜的电导特性".半导体学报 21.3(2000):308.
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