SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
Au-GaN肖特基结的伏安特性
林兆军; 张太平; 武国英; 王玮; 阎桂珍; 孙殿照; 张建平; 张国义
2000
Source Publication半导体学报
Volume21Issue:4Pages:369
Abstract在MBE和MOCVD两种方法制备的n-GaN材料上制作了Au-GaN肖特基结,测定了肖特基结的室温I-V特性。分析表明
metadata_83北京大学微电子所;中科院半导体所;北京大学物理系
Subject Area半导体材料
Funding Organization国家九五计划
Indexed ByCSCD
Language中文
CSCD IDCSCD:532709
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/18805
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
林兆军,张太平,武国英,等. Au-GaN肖特基结的伏安特性[J]. 半导体学报,2000,21(4):369.
APA 林兆军.,张太平.,武国英.,王玮.,阎桂珍.,...&张国义.(2000).Au-GaN肖特基结的伏安特性.半导体学报,21(4),369.
MLA 林兆军,et al."Au-GaN肖特基结的伏安特性".半导体学报 21.4(2000):369.
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