SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
InGaN/AlGaN双异质结绿光发光二极管
陆大成; 韩培德; 刘祥林; 王晓晖; 汪度; 袁海荣; 王良臣; 徐萍; 姚文卿; 高翠华; 刘焕章; 葛永才; 郑东
2000
Source Publication半导体学报
Volume21Issue:4Pages:414
Abstract报道了用LP-MOVPE技术在蓝宝石(α-Al_2O_3)衬底上生长出以双掺Zn和Si的InGaN为有源区的绿光InGaN/AlGaN双异质结结构,并研制成功发射波长为520-540nm的绿光LED。
metadata_83中科院半导体所
Subject Area半导体材料
Funding Organization国家863计划
Indexed ByCSCD
Language中文
CSCD IDCSCD:532718
Date Available2010-11-23
Citation statistics
Cited Times:5[CSCD]   [CSCD Record]
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/18803
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
陆大成,韩培德,刘祥林,等. InGaN/AlGaN双异质结绿光发光二极管[J]. 半导体学报,2000,21(4):414.
APA 陆大成.,韩培德.,刘祥林.,王晓晖.,汪度.,...&郑东.(2000).InGaN/AlGaN双异质结绿光发光二极管.半导体学报,21(4),414.
MLA 陆大成,et al."InGaN/AlGaN双异质结绿光发光二极管".半导体学报 21.4(2000):414.
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