SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
High Efficiency Al-Free 980 nm InGaAs/ InGaAsP/ InGaP Strained Quantum Well Lasers
Xu ZT(徐遵图); Yang GW(杨国文); Zhang JM(张敬明); Ma XY(马骁宇); Xu JY(徐俊英); Shen GD(沈光地); Chen LH(陈良惠)
2000
Source Publication半导体学报
Volume21Issue:5Pages:417
metadata_83中科院半导体所;北京工业大学
Subject Area半导体器件
Funding Organization国家863计划
Indexed ByCSCD
Language英语
CSCD IDCSCD:532719
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/18801
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
Xu ZT,Yang GW,Zhang JM,et al. High Efficiency Al-Free 980 nm InGaAs/ InGaAsP/ InGaP Strained Quantum Well Lasers[J]. 半导体学报,2000,21(5):417.
APA 徐遵图.,杨国文.,张敬明.,马骁宇.,徐俊英.,...&陈良惠.(2000).High Efficiency Al-Free 980 nm InGaAs/ InGaAsP/ InGaP Strained Quantum Well Lasers.半导体学报,21(5),417.
MLA 徐遵图,et al."High Efficiency Al-Free 980 nm InGaAs/ InGaAsP/ InGaP Strained Quantum Well Lasers".半导体学报 21.5(2000):417.
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