SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
垂直入射Si_(0.7)Ge_(0.3)/Si多量子阱光电探测器
李成; 杨沁清; 王红杰; 罗丽萍; 成步文; 余金中; 王启明
2000
Source Publication半导体学报
Volume21Issue:5Pages:480
Abstract报道了正入射Si_(0.7)Ge_(0.3)/Si多量子阱结构光电探测器的制作和实验结果。测试了它的光电流谱和量子效率。探测器的响应波长扩展到了1.3μm以上波段。在1.3μm处量子效率为0.1%。量子效率峰值在0.95μm处达到20%。
metadata_83中科院半导体所
Subject Area光电子学
Funding Organization国家863计划,国家自然科学基金,国家自然科学基金
Indexed ByCSCD
Language中文
CSCD IDCSCD:532731
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/18797
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
李成,杨沁清,王红杰,等. 垂直入射Si_(0.7)Ge_(0.3)/Si多量子阱光电探测器[J]. 半导体学报,2000,21(5):480.
APA 李成.,杨沁清.,王红杰.,罗丽萍.,成步文.,...&王启明.(2000).垂直入射Si_(0.7)Ge_(0.3)/Si多量子阱光电探测器.半导体学报,21(5),480.
MLA 李成,et al."垂直入射Si_(0.7)Ge_(0.3)/Si多量子阱光电探测器".半导体学报 21.5(2000):480.
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