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a-SiO_x∶H/a-SiO_y∶H多层薄膜微结构的退火行为
郭震宁; 黄永箴; 郭亨群; 李世忱; 王启明
2000
Source Publication半导体学报
Volume21Issue:6Pages:576
metadata_83天津大学精密仪器与光电子工程学院;中科院半导体所;华侨大学应用物理系
Subject Area光电子学
Funding Organization集成光电子学联合国家重点实验室基金,国家自然科学基金
Indexed ByCSCD
Language中文
CSCD IDCSCD:532748
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/18785
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
郭震宁,黄永箴,郭亨群,等. a-SiO_x∶H/a-SiO_y∶H多层薄膜微结构的退火行为[J]. 半导体学报,2000,21(6):576.
APA 郭震宁,黄永箴,郭亨群,李世忱,&王启明.(2000).a-SiO_x∶H/a-SiO_y∶H多层薄膜微结构的退火行为.半导体学报,21(6),576.
MLA 郭震宁,et al."a-SiO_x∶H/a-SiO_y∶H多层薄膜微结构的退火行为".半导体学报 21.6(2000):576.
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