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衬底温度和生长速率对MBE自组织生长In_xGa_(1-x)As/GaAsQD的影响
于磊; 曾一平; 潘量; 孔梅影; 李晋闽; 李灵霄; 周宏伟
2000
Source Publication半导体学报
Volume21Issue:7Pages:652
Abstract研究GaAs基In_xGa_(1-x)As/GaAs量子点(QD)的MBE生长条件,发现在一定的Ⅴ/Ⅲ比下,衬底温度和生长速率是影响In_xGa_(1-x)As/GaAs QD形成及形状的一对重要因素,基中衬底温度直接影响着In的偏析程度,决定了In_xGa_(1-x)As/GaAs的生长模式;生长速率影响着In_xGa_(1-x)As外延层的质量,决定了In_xGa_(1-x)As/GaAs QD的形状及尺寸。通过调节衬底温度和生长速率生长出了形状规则、尺寸较均匀的In_xGa_(1-x)As/GaAs QD(x=0.3)。
metadata_83中科院半导体所
Subject Area半导体材料
Indexed ByCSCD
Language中文
CSCD IDCSCD:532761
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/18781
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
于磊,曾一平,潘量,等. 衬底温度和生长速率对MBE自组织生长In_xGa_(1-x)As/GaAsQD的影响[J]. 半导体学报,2000,21(7):652.
APA 于磊.,曾一平.,潘量.,孔梅影.,李晋闽.,...&周宏伟.(2000).衬底温度和生长速率对MBE自组织生长In_xGa_(1-x)As/GaAsQD的影响.半导体学报,21(7),652.
MLA 于磊,et al."衬底温度和生长速率对MBE自组织生长In_xGa_(1-x)As/GaAsQD的影响".半导体学报 21.7(2000):652.
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