SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
GSMBE生长的高质量氮化镓材料
孙殿照; 王晓亮; 王军喜; 刘宏新; 刘成海; 曾一平; 李晋闽; 侯洵; 林兰英
2000
Source Publication半导体学报
Volume21Issue:7Pages:723
Abstract使用NH_3作氮源,采用GSMBE方法在(0001)Al_2O_3衬底上生长出了高质量的GaN单晶外延膜。1.2μm厚的GaN外延膜的(0002)X射线双晶衍射峰回摆曲线的半高宽为6',室温电子迁移率为300cm~2(V·s),背景电子浓度约为3×10~(17)cm~(-3)。
metadata_83中科院半导体所;中科院西安光学精密机械所
Subject Area半导体材料
Indexed ByCSCD
Language中文
CSCD IDCSCD:532774
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/18779
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
孙殿照,王晓亮,王军喜,等. GSMBE生长的高质量氮化镓材料[J]. 半导体学报,2000,21(7):723.
APA 孙殿照.,王晓亮.,王军喜.,刘宏新.,刘成海.,...&林兰英.(2000).GSMBE生长的高质量氮化镓材料.半导体学报,21(7),723.
MLA 孙殿照,et al."GSMBE生长的高质量氮化镓材料".半导体学报 21.7(2000):723.
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