SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
InGaN/GaN单量子阱绿光发光二极管
王晓晖; 刘祥林; 陆大成; 袁海荣; 韩培德; 汪度
2000
Source Publication半导体学报
Volume21Issue:7Pages:726
Abstract采用金属有机物气相外延方法,研制了InGaN/GaN单量子阱结构的绿光发光二极管。测量了其电致发光光谱,及发光强度与注入电流的关系。室温20mA的注入电流时,发光波长峰值为530nm,半高宽为30nm。注入电流小于40mA时,发光强度随注入电流单调递增。
metadata_83中科院半导体所
Subject Area半导体材料
Funding Organization国家863计划
Indexed ByCSCD
Language中文
CSCD IDCSCD:532775
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/18777
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
王晓晖,刘祥林,陆大成,等. InGaN/GaN单量子阱绿光发光二极管[J]. 半导体学报,2000,21(7):726.
APA 王晓晖,刘祥林,陆大成,袁海荣,韩培德,&汪度.(2000).InGaN/GaN单量子阱绿光发光二极管.半导体学报,21(7),726.
MLA 王晓晖,et al."InGaN/GaN单量子阱绿光发光二极管".半导体学报 21.7(2000):726.
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