SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
大功率In(Ga)As/GaAs量子点激光器
王占国; 刘峰奇; 梁基本; 徐波; 丁鼎; 龚谦; 韩勤
2000
Source Publication半导体学报
Volume21Issue:8Pages:827
Abstract利用分子束外延技术和S-K生长模式,系统研究了InAs/GaAs材料体系应变自组装量子点的形成和演化。研制出激射波长λ≈960nm,条宽100μnm,腔长800μm的In(Ga)As/GaAs量子点激光器
metadata_83中科院半导体所
Subject Area半导体材料
Funding Organization国家自然科学基金,国家863计划
Indexed ByCSCD
Language中文
CSCD IDCSCD:532793
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/18767
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
王占国,刘峰奇,梁基本,等. 大功率In(Ga)As/GaAs量子点激光器[J]. 半导体学报,2000,21(8):827.
APA 王占国.,刘峰奇.,梁基本.,徐波.,丁鼎.,...&韩勤.(2000).大功率In(Ga)As/GaAs量子点激光器.半导体学报,21(8),827.
MLA 王占国,et al."大功率In(Ga)As/GaAs量子点激光器".半导体学报 21.8(2000):827.
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