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MBE生长的高质量AlGaAs/InGaAs双δ掺杂PHEMT结构的材料
曹昕; 曾一平; 孔梅影; 王保强; 潘量; 张??; 朱战萍
2000
Source Publication半导体学报
Volume21Issue:9Pages:934
Abstract用MBE方法制备的PHEMT微结构材料,其2DEG浓度随材料结构的不同在2.0-4.0×10~(12)cm~(-2)之间,室温霍耳迁移率在5000-6500cm~2·V~(-1)·s~(-1)之间。制备的PHEMT器件,栅长为0.7μm的器件的直流特性:I_(dss)~280mA/mm,I_(max)~520-580mA/mm,g_m~320-400mS/mm,BV_(DS)>15V(I_(DS)=1mA/mm),BV_(GS)>10V,微波特性:P_0~600-900mW/mm,G~6-10dB,η_(add)~40-60%;栅长为0.4μm的器件的直流特性:I_(max)~800mA/mm,g_m>400mS/mm。
metadata_83中科院半导体所
Subject Area半导体材料
Funding Organization国家九五计划
Indexed ByCSCD
Language中文
CSCD IDCSCD:532814
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/18759
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
曹昕,曾一平,孔梅影,等. MBE生长的高质量AlGaAs/InGaAs双δ掺杂PHEMT结构的材料[J]. 半导体学报,2000,21(9):934.
APA 曹昕.,曾一平.,孔梅影.,王保强.,潘量.,...&朱战萍.(2000).MBE生长的高质量AlGaAs/InGaAs双δ掺杂PHEMT结构的材料.半导体学报,21(9),934.
MLA 曹昕,et al."MBE生长的高质量AlGaAs/InGaAs双δ掺杂PHEMT结构的材料".半导体学报 21.9(2000):934.
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