SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
Annealing Behavior of Si_(1-x)Ge_x/Si Heterostructures
Yu Z(于卓); Li DZ(李代宗); Cheng BW(成步文); Li C(李成); Lei ZL(雷震霖); Huang CJ(黄昌俊); Zhang CH(张春辉); Yu JZ(余金中); Wang QM(王启明); Liang JW(梁骏吾)
2000
Source Publication半导体学报
Volume21Issue:10Pages:962
metadata_83中科院半导体所;中科院沈阳科学仪器研制中心
Subject Area光电子学
Funding Organization国家自然科学基金
Indexed ByCSCD
Language英语
CSCD IDCSCD:532817
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/18757
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
Yu Z,Li DZ,Cheng BW,et al. Annealing Behavior of Si_(1-x)Ge_x/Si Heterostructures[J]. 半导体学报,2000,21(10):962.
APA 于卓.,李代宗.,成步文.,李成.,雷震霖.,...&梁骏吾.(2000).Annealing Behavior of Si_(1-x)Ge_x/Si Heterostructures.半导体学报,21(10),962.
MLA 于卓,et al."Annealing Behavior of Si_(1-x)Ge_x/Si Heterostructures".半导体学报 21.10(2000):962.
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