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Annealing Behavior of Si_(1-x)Ge_x/Si Heterostructures | |
Yu Z(于卓); Li DZ(李代宗); Cheng BW(成步文)![]() | |
2000 | |
Source Publication | 半导体学报
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Volume | 21Issue:10Pages:962 |
metadata_83 | 中科院半导体所;中科院沈阳科学仪器研制中心 |
Subject Area | 光电子学 |
Funding Organization | 国家自然科学基金 |
Indexed By | CSCD |
Language | 英语 |
CSCD ID | CSCD:532817 |
Date Available | 2010-11-23 |
Citation statistics | |
Document Type | 期刊论文 |
Identifier | http://ir.semi.ac.cn/handle/172111/18757 |
Collection | 中国科学院半导体研究所(2009年前) |
Recommended Citation GB/T 7714 | Yu Z,Li DZ,Cheng BW,et al. Annealing Behavior of Si_(1-x)Ge_x/Si Heterostructures[J]. 半导体学报,2000,21(10):962. |
APA | 于卓.,李代宗.,成步文.,李成.,雷震霖.,...&梁骏吾.(2000).Annealing Behavior of Si_(1-x)Ge_x/Si Heterostructures.半导体学报,21(10),962. |
MLA | 于卓,et al."Annealing Behavior of Si_(1-x)Ge_x/Si Heterostructures".半导体学报 21.10(2000):962. |
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