Annealing Behavior of Si_(1-x)Ge_x/Si Heterostructures

SEMI OpenIR > 中国科学院半导体研究所（2009年前）

	Annealing Behavior of Si_(1-x)Ge_x/Si Heterostructures
	Yu Z(于卓); Li DZ(李代宗); Cheng BW(成步文); Li C(李成); Lei ZL(雷震霖); Huang CJ(黄昌俊); Zhang CH(张春辉); Yu JZ(余金中); Wang QM(王启明); Liang JW(梁骏吾)
	2000
Source Publication	半导体学报
Volume	21 Issue:10 Pages:962
metadata_83	中科院半导体所;中科院沈阳科学仪器研制中心
Subject Area	光电子学
Funding Organization	国家自然科学基金
Indexed By	CSCD
Language	英语
CSCD ID	CSCD:532817
Date Available	2010-11-23
Citation statistics
Document Type	期刊论文
Identifier	http://ir.semi.ac.cn/handle/172111/18757
Collection	中国科学院半导体研究所（2009年前）
Recommended Citation GB/T 7714	Yu Z,Li DZ,Cheng BW,et al. Annealing Behavior of Si_(1-x)Ge_x/Si Heterostructures[J]. 半导体学报,2000,21(10):962.
APA	于卓.,李代宗.,成步文.,李成.,雷震霖.,...&梁骏吾.(2000).Annealing Behavior of Si_(1-x)Ge_x/Si Heterostructures.半导体学报,21(10),962.
MLA	于卓,et al."Annealing Behavior of Si_(1-x)Ge_x/Si Heterostructures".半导体学报 21.10(2000):962.

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