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不同尺寸分布的自组织In_(0.55)Al_(0.45)As/Al_(0.5)Ga_(0.5)As量子点的静压光谱
陈晔; 张旺; 李国华; 韩和相; 汪兆平; 周伟; 王占国
2000
Source Publication半导体学报
Volume21Issue:11Pages:1092
Abstract在15K测量了不同尺寸分布的In_(0.55)Al_(0.45)As/Al_(0.5)Ga_(0.5)As量子点的静压我致发光,静压范围为0--1.3GPa。常压下观察到三个发光峰,分别来源于不同尺寸的量子点(横向直径分别为26、52和62nm)的发光。它产的压力系数分别为82、94和98meV/GPa,都小于In_(0.55)Al_(0.45)As体材料带边的压力系数,特别是尺寸为26nm的小量子点比In_(0.55)Al_(0.45)As体材料带边小17%,并且压力系数随量子点尺寸的变小而减小。理论计算表明有效质量的增在和Γ-X混合是量子点压力系数变小的主要原因,并得到横向直径为26和52nm的小量子点的Γ-X混合势为15和10meV。根据实验还确定In_(0.55)Al_(0.45)As/Al_(0.5)Ga_(0.5)As量子点系统X能带具有Ⅱ类结构,并且估算出价带不连续量为0.15±0.02。
metadata_83中科院半导体所
Subject Area半导体材料
Funding Organization国家自然科学基金
Indexed ByCSCD
Language中文
CSCD IDCSCD:532843
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/18743
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
陈晔,张旺,李国华,等. 不同尺寸分布的自组织In_(0.55)Al_(0.45)As/Al_(0.5)Ga_(0.5)As量子点的静压光谱[J]. 半导体学报,2000,21(11):1092.
APA 陈晔.,张旺.,李国华.,韩和相.,汪兆平.,...&王占国.(2000).不同尺寸分布的自组织In_(0.55)Al_(0.45)As/Al_(0.5)Ga_(0.5)As量子点的静压光谱.半导体学报,21(11),1092.
MLA 陈晔,et al."不同尺寸分布的自组织In_(0.55)Al_(0.45)As/Al_(0.5)Ga_(0.5)As量子点的静压光谱".半导体学报 21.11(2000):1092.
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