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| Effects of Growth Conditions on Optical Properties ofGa In NAs/Ga As Quantum Well Grown by Molecular Beam Epitaxy | |
Li LH(李联合); Pan Z(潘钟); Zhang W(张伟) ; Lin YW(林耀望); Wang XY(王学宇); Wu RH(吴荣汉)
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| 2000 | |
| Source Publication | 半导体学报
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| Volume | 21Issue:12Pages:1152 |
| metadata_83 | 中科院半导体所 |
| Subject Area | 光电子学 |
| Funding Organization | 中科院基金,国家自然科学基金,国家攀登计划 |
| Indexed By | CSCD |
| Language | 英语 |
| CSCD ID | CSCD:532853 |
| Date Available | 2010-11-23 |
| Citation statistics | |
| Document Type | 期刊论文 |
| Identifier | http://ir.semi.ac.cn/handle/172111/18739 |
| Collection | 中国科学院半导体研究所（2009年前） |
| Recommended Citation GB/T 7714 | Li LH,Pan Z,Zhang W,et al. Effects of Growth Conditions on Optical Properties ofGa In NAs/Ga As Quantum Well Grown by Molecular Beam Epitaxy[J]. 半导体学报,2000,21(12):1152. |
| APA | 李联合,潘钟,张伟,林耀望,王学宇,&吴荣汉.(2000).Effects of Growth Conditions on Optical Properties ofGa In NAs/Ga As Quantum Well Grown by Molecular Beam Epitaxy.半导体学报,21(12),1152. |
| MLA | 李联合,et al."Effects of Growth Conditions on Optical Properties ofGa In NAs/Ga As Quantum Well Grown by Molecular Beam Epitaxy".半导体学报 21.12(2000):1152. |
| Files in This Item: | ||||||
| File Name/Size | DocType | Version | Access | License | ||
| 5417.pdf（315KB） | 限制开放 | -- | Application Full Text | |||
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