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Effects of Growth Conditions on Optical Properties ofGa In NAs/Ga As Quantum Well Grown by Molecular Beam Epitaxy | |
Li LH(李联合); Pan Z(潘钟); Zhang W(张伟)![]() | |
2000 | |
Source Publication | 半导体学报
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Volume | 21Issue:12Pages:1152 |
metadata_83 | 中科院半导体所 |
Subject Area | 光电子学 |
Funding Organization | 中科院基金,国家自然科学基金,国家攀登计划 |
Indexed By | CSCD |
Language | 英语 |
CSCD ID | CSCD:532853 |
Date Available | 2010-11-23 |
Citation statistics | |
Document Type | 期刊论文 |
Identifier | http://ir.semi.ac.cn/handle/172111/18739 |
Collection | 中国科学院半导体研究所(2009年前) |
Recommended Citation GB/T 7714 | Li LH,Pan Z,Zhang W,et al. Effects of Growth Conditions on Optical Properties ofGa In NAs/Ga As Quantum Well Grown by Molecular Beam Epitaxy[J]. 半导体学报,2000,21(12):1152. |
APA | 李联合,潘钟,张伟,林耀望,王学宇,&吴荣汉.(2000).Effects of Growth Conditions on Optical Properties ofGa In NAs/Ga As Quantum Well Grown by Molecular Beam Epitaxy.半导体学报,21(12),1152. |
MLA | 李联合,et al."Effects of Growth Conditions on Optical Properties ofGa In NAs/Ga As Quantum Well Grown by Molecular Beam Epitaxy".半导体学报 21.12(2000):1152. |
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