SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
Effects of Growth Conditions on Optical Properties ofGa In NAs/Ga As Quantum Well Grown by Molecular Beam Epitaxy
Li LH(李联合); Pan Z(潘钟); Zhang W(张伟); Lin YW(林耀望); Wang XY(王学宇); Wu RH(吴荣汉)
2000
Source Publication半导体学报
Volume21Issue:12Pages:1152
metadata_83中科院半导体所
Subject Area光电子学
Funding Organization中科院基金,国家自然科学基金,国家攀登计划
Indexed ByCSCD
Language英语
CSCD IDCSCD:532853
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/18739
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
Li LH,Pan Z,Zhang W,et al. Effects of Growth Conditions on Optical Properties ofGa In NAs/Ga As Quantum Well Grown by Molecular Beam Epitaxy[J]. 半导体学报,2000,21(12):1152.
APA 李联合,潘钟,张伟,林耀望,王学宇,&吴荣汉.(2000).Effects of Growth Conditions on Optical Properties ofGa In NAs/Ga As Quantum Well Grown by Molecular Beam Epitaxy.半导体学报,21(12),1152.
MLA 李联合,et al."Effects of Growth Conditions on Optical Properties ofGa In NAs/Ga As Quantum Well Grown by Molecular Beam Epitaxy".半导体学报 21.12(2000):1152.
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