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高精度单向模拟开关的设计及其基于CMOS工艺的电路实现
兀革; 石寅
2000
Source Publication半导体学报
Volume21Issue:12Pages:1214
Abstract提出并设计了一种基于CMOS工艺实现的高速高精度的单向隔离模拟开关,该开关用在高速两步法A/D转换器中使电路结构大为简化。通过对开关特性的理论分析与电路模拟,证明了这种模拟开关具有高速可控性,传输信号的精度优于先前研究的双极单向隔离模拟开关。
metadata_83中科院半导体所
Subject Area微电子学
Indexed ByCSCD
Language中文
CSCD IDCSCD:532864
Date Available2010-11-23
Citation statistics
Cited Times:2[CSCD]   [CSCD Record]
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/18735
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
兀革,石寅. 高精度单向模拟开关的设计及其基于CMOS工艺的电路实现[J]. 半导体学报,2000,21(12):1214.
APA 兀革,&石寅.(2000).高精度单向模拟开关的设计及其基于CMOS工艺的电路实现.半导体学报,21(12),1214.
MLA 兀革,et al."高精度单向模拟开关的设计及其基于CMOS工艺的电路实现".半导体学报 21.12(2000):1214.
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