SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
MOCVD生长的InGaN合金的性质
闫华; 卢励吾; 王占国
2001
Source Publication半导体学报
Volume22Issue:2Pages:166
Abstract对使用MOCVD方法在蓝宝石衬底上生长的典型InGaN样品进行了光致发光(PL)、霍耳(Hall)及扫描电镜(SEM)测量。结果表明
metadata_83中科院半导体所
Subject Area半导体材料
Funding Organization国家自然科学基金
Indexed ByCSCD
Language中文
CSCD IDCSCD:532899
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/18715
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
闫华,卢励吾,王占国. MOCVD生长的InGaN合金的性质[J]. 半导体学报,2001,22(2):166.
APA 闫华,卢励吾,&王占国.(2001).MOCVD生长的InGaN合金的性质.半导体学报,22(2),166.
MLA 闫华,et al."MOCVD生长的InGaN合金的性质".半导体学报 22.2(2001):166.
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