SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
GeSi/Si多层异质外延载流子浓度的分布
张秀兰; 朱文珍; 黄大定
2001
Source Publication半导体学报
Volume22Issue:3Pages:288
Abstract通过实验研究了一种与Ge_xSi_(1-x)合金表面具有良好电化学界面的电解液,利用电化学C-V方法研究了多层Ge_xSi_(1-x)/Si异质外延材料的载流子浓度纵向分布。实验结果表明
metadata_83中科院半导体所
Subject Area半导体材料
Indexed ByCSCD
Language中文
CSCD IDCSCD:532922
Date Available2010-11-23
Citation statistics
Cited Times:2[CSCD]   [CSCD Record]
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/18711
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
张秀兰,朱文珍,黄大定. GeSi/Si多层异质外延载流子浓度的分布[J]. 半导体学报,2001,22(3):288.
APA 张秀兰,朱文珍,&黄大定.(2001).GeSi/Si多层异质外延载流子浓度的分布.半导体学报,22(3),288.
MLA 张秀兰,et al."GeSi/Si多层异质外延载流子浓度的分布".半导体学报 22.3(2001):288.
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