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InAs/GaAs自组织量子点激发态的激射
汪辉; 牛智川; 王海龙; 王晓东; 封松林
2001
Source Publication半导体学报
Volume22Issue:3Pages:295
Abstract将覆盖层引入生长停顿的量子点结构作为激光器有源区来研究量子点激光器受激发射机制。由于强烈的能带填充效应,光致发光谱和电致发光谱中观察到对应于量子点激发态跃迁的谱峰,大激发时其强度超过基态跃迁对应的谱峰。最后激发态跃迁达到阈值条件,激射能量比结构相似但不含量子点的激光器低,表明量子点激光器中首先实现受激发射是量子点的激发态。
metadata_83中科院半导体所
Subject Area半导体材料
Funding Organization国家攀登计划,国家自然科学基金
Indexed ByCSCD
Language中文
CSCD IDCSCD:532924
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/18709
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
汪辉,牛智川,王海龙,等. InAs/GaAs自组织量子点激发态的激射[J]. 半导体学报,2001,22(3):295.
APA 汪辉,牛智川,王海龙,王晓东,&封松林.(2001).InAs/GaAs自组织量子点激发态的激射.半导体学报,22(3),295.
MLA 汪辉,et al."InAs/GaAs自组织量子点激发态的激射".半导体学报 22.3(2001):295.
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