SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
RCE光电探测器顶部 DBR的优化(英文)
梁琨; 陈弘达; 邓晖; 杜云; 唐君; 吴荣汉
2001
Source Publication半导体学报
Volume22Issue:4Pages:409
Abstract对研制的VCSEL结构外延片制成的谐振腔增强型(简称RCE)光电探测器进行了物理分析和实验研究,由于VCSEL与RCE光电探测器对谐振腔反射镜的反射率要求不同,通过腐蚀VCSEL器件顶部DBR,改变顶镜反射率,能够得到量子效率峰值和半宽优化兼容的RCE光电探测器,实现VCSEL与RCE探测器的单片集成。
metadata_83中科院半导体所
Subject Area光电子学
Funding Organization国家863计划,国家自然科学基金
Indexed ByCSCD
Language中文
CSCD IDCSCD:532946
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/18703
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
梁琨,陈弘达,邓晖,等. RCE光电探测器顶部 DBR的优化(英文)[J]. 半导体学报,2001,22(4):409.
APA 梁琨,陈弘达,邓晖,杜云,唐君,&吴荣汉.(2001).RCE光电探测器顶部 DBR的优化(英文).半导体学报,22(4),409.
MLA 梁琨,et al."RCE光电探测器顶部 DBR的优化(英文)".半导体学报 22.4(2001):409.
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