SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
非掺杂n型氮化镓外延层的光致发光
彭长涛; 陈诺夫; 林兰英; 柯俊
2001
Source Publication半导体学报
Volume22Issue:4Pages:431
Abstract研究了热处理对非掺杂n型氮化镓外延层光致发光谱的影响和光谱中各发光带强度与温度之间的关系。热处理后,光谱中的带边峰和黄光峰的强度较热处理前都有明显降低。黄光峰强度随温度升高的衰减速度要比带边峰慢得多。由这些实验结果得出结论
metadata_83中科院半导体所;北京科技大学材料科学与工程学院
Subject Area半导体材料
Indexed ByCSCD
Language中文
CSCD IDCSCD:532951
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/18699
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
彭长涛,陈诺夫,林兰英,等. 非掺杂n型氮化镓外延层的光致发光[J]. 半导体学报,2001,22(4):431.
APA 彭长涛,陈诺夫,林兰英,&柯俊.(2001).非掺杂n型氮化镓外延层的光致发光.半导体学报,22(4),431.
MLA 彭长涛,et al."非掺杂n型氮化镓外延层的光致发光".半导体学报 22.4(2001):431.
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