SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
6H-SiC高反压台面pn结二极管
王姝睿; 刘忠立; 李晋闽; 王良臣; 徐萍
2001
Source Publication半导体学报
Volume22Issue:4Pages:507
Abstract在可商业获得的单晶6H-SiC晶片上,通过化学气相淀积,进行同质外延生长;并在此6H-SiC结构材料上,利用反应离子刻蚀和接触合金化技术,制作台面pn结二极管。详细测量并分析了器件的电学特性,测量结果表明此6H-SiC二极管在室温、空气介质中,-10V时,漏电流密度为2.4×10~(-8)A/cm~2,在反向电压低于600V及接近300℃高温下都具有良好的整流特性。
metadata_83中科院半导体所
Subject Area半导体器件
Indexed ByCSCD
Language中文
CSCD IDCSCD:532967
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/18697
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
王姝睿,刘忠立,李晋闽,等. 6H-SiC高反压台面pn结二极管[J]. 半导体学报,2001,22(4):507.
APA 王姝睿,刘忠立,李晋闽,王良臣,&徐萍.(2001).6H-SiC高反压台面pn结二极管.半导体学报,22(4),507.
MLA 王姝睿,et al."6H-SiC高反压台面pn结二极管".半导体学报 22.4(2001):507.
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